AOI4130 Todos los transistores

 ..1. Size:479K  aosemi
 aod4130 aoi4130.pdf

AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 30A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..2. Size:304K  aosemi
 aoi4130.pdf

AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 30A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..3. Size:271K  inchange semiconductor
 aoi4130.pdf

Isc N-Channel MOSFET Transistor AOI4130 FEATURES With TO-251(IPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.1. Size:269K  aosemi
 aod4185 aoi4185.pdf

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

 9.2. Size:269K  aosemi
 aoi4185.pdf

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

 9.3. Size:344K  aosemi
 aoi4184.pdf

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50A low gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)

 9.4. Size:358K  aosemi
 aoi4146.pdf

AOD4146/AOI4146 30V N-Channel MOSFET TM SDMOS General Description Product Summary 30V The AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.5. Size:457K  aosemi
 aoi4126.pdf

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.6. Size:291K  aosemi
 aoi4102.pdf

AOD4102/AOI4102 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19A low gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)

 9.7. Size:457K  aosemi
 aod4126 aoi4126.pdf

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.8. Size:344K  aosemi
 aod4184 aoi4184.pdf

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50A low gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)

 9.9. Size:280K  aosemi
 aoi418.pdf

AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary VDS The AOD418/AOI418 uses advanced trench technology to 30V 36A provide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V) resistance. With the excellent thermal resistance of the

 9.10. Size:240K  inchange semiconductor
 aoi4185.pdf

isc P-Channel MOSFET Transistor AOI4185 FEATURES Drain Current I = -40A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R =15m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.11. Size:258K  inchange semiconductor
 aoi4184.pdf

isc N-Channel MOSFET Transistor AOI4184 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general

 9.12. Size:274K  inchange semiconductor
 aoi4146.pdf

isc N-Channel MOSFET Transistor AOI4146 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =5.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.13. Size:273K  inchange semiconductor
 aoi4126.pdf

isc N-Channel MOSFET Transistor AOI4126 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.14. Size:273K  inchange semiconductor
 aoi4102.pdf

isc N-Channel MOSFET Transistor AOI4102 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =37m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.15. Size:257K  inchange semiconductor
 aoi418.pdf

isc N-Channel MOSFET Transistor AOI418 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera