AOI4286 Todos los transistores

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 aod4286 aoi4286.pdf

AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 14A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..2. Size:318K  aosemi
 aoi4286.pdf

AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 14A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

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 aoi4286.pdf

Isc N-Channel MOSFET Transistor AOI4286 FEATURES With To-251(IPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

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 aoi423.pdf

AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

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 aod423 aoi423 aoy423.pdf

AOD423/AOI423/AOY423 TM 30V P-Channel AlphaSGT General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

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 aoi423.pdf

isc P-Channel MOSFET Transistor AOI423 FEATURES Drain Current I = -70A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo