AOI4286 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOI4286
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.9 V
   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: TO-251A

Búsqueda de reemplazo de MOSFET AOI4286

AOI4286 Datasheet (PDF)

..1. Size:318K aosemi
aod4286 aoi4286.pdf

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

..2. Size:318K aosemi
aoi4286.pdf

..3. Size:271K inchange semiconductor
aoi4286.pdf

Isc N-Channel MOSFET Transistor AOI4286FEATURESWith To-251(IPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

9.1. Size:374K aosemi
aoi423.pdf

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

9.2. Size:266K inchange semiconductor
aoi423.pdf

isc P-Channel MOSFET Transistor AOI423FEATURESDrain Current I = -70A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FTK03N10 | SML1002RCN

Liste

Recientemente añadidas las descripciónes de los transistores: