AOI482 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI482
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Paquete / Cubierta: TO-251A
Búsqueda de reemplazo de AOI482 MOSFET
AOI482 Datasheet (PDF)
aod482 aoi482.pdf

AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aoi482.pdf

AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aoi482.pdf

isc N-Channel MOSFET Transistor AOI482FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Otros transistores... AOI4184 , AOI4185 , AOI423 , AOI4286 , AOI442 , AOI444 , AOI468 , AOI478 , IRF740 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 , AOI514 , AOI516 .
History: FTK84D | KF3N60D | SSPL1010 | SVS60R360L8AE3TR | DH300P06I | AOT11N70 | MTH15N35
History: FTK84D | KF3N60D | SSPL1010 | SVS60R360L8AE3TR | DH300P06I | AOT11N70 | MTH15N35



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