AOL1482 Todos los transistores

 

AOL1482 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOL1482

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.7 V

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 0.037 Ohm

Empaquetado / Estuche: Ultra-SO8

Búsqueda de reemplazo de MOSFET AOL1482

 

AOL1482 Datasheet (PDF)

1.1. aol1482.pdf Size:232K _aosemi

AOL1482
AOL1482

AOL1482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 28A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) < 37mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 4.5V) < 42mΩ telecom, industrial po

5.1. aol1404g.pdf Size:352K _aosemi

AOL1482
AOL1482

AOL1404G 20V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 20V • Low RDS(ON) ID (at VGS=4.5V) 46A • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) < 4.6mΩ RDS(ON) (at VGS=2.5V) < 6mΩ Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Battery protection switch D Ult

5.2. aol1412.pdf Size:255K _aosemi

AOL1482
AOL1482

AOL1412 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AOL1412 uses advanced trench technology ID (at VGS=10V) 70A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) < 3.8mΩ suitable for use as a low side FET in SMPS, load RDS(ON) (at VGS = 4.5V) < 4.5mΩ swi

 5.3. aol1428.pdf Size:230K _aosemi

AOL1482
AOL1482

AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V is suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V) general purpose applications. RDS(ON) <9.5mΩ (VGS = 10V) RDS(ON) <16mΩ (VGS = 4.5V) -RoHS Compliant -Hal

5.4. aol1446.pdf Size:226K _aosemi

AOL1482
AOL1482

AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) < 7mΩ (VGS = 10V) as a high side switch in CPU core power conversion. RDS(ON) < 11mΩ (VGS = 4.5V) -R

 5.5. aol1413.pdf Size:138K _aosemi

AOL1482
AOL1482

AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30V with a 25V gate rating. This device is suitable for use ID = -38A (VGS = -10V) as a load switch or in PWM applications. The device is RDS(ON) < 17mΩ (VGS = -10V) ESD protected.

5.6. aol1454g.pdf Size:370K _aosemi

AOL1482
AOL1482

AOL1454G TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A • Low RDS(ON) • Logic Level Driving RDS(ON) (at VGS=10V) < 5.9mΩ • Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=4.5V) < 9.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested •

5.7. aol1401.pdf Size:144K _aosemi

AOL1482
AOL1482

AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON) < 8.5mΩ (VGS = -20V) ESD protected. RDS(ON) < 10mΩ

5.8. aol1414.pdf Size:170K _aosemi

AOL1482
AOL1482

AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) < 6.5mΩ (VGS = 10V) as a high side switch in CPU core power conversion. RDS(ON) < 7.5mΩ (VGS = 4.5V)

5.9. aol1408.pdf Size:208K _aosemi

AOL1482
AOL1482

AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally suited RDS(ON) < 4mΩ (VGS = 10V) for use as a low side switch in CPU core power RDS(ON) < 6mΩ (VGS = 4.5V)

5.10. aol1432a.pdf Size:156K _aosemi

AOL1482
AOL1482

AOL1432A N-Channel SDMOSTM POWER Transistor General Description Features VDS (V) = 25V The AOL1432A is fabricated with SDMOSTM trench ID = 44A (VGS = 10V) technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with RDS(ON) < 7.5mΩ (VGS = 10V) controlled switching behavior. This universal technology RDS(ON) <14mΩ (VGS = 4.5V) is well s

5.11. aol1426.pdf Size:231K _aosemi

AOL1482
AOL1482

AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This device ID = 46A (VGS = 10V) is suitable for use as a high side switch in SMPS and RDS(ON) < 10.5mΩ (VGS = 10V) general purpose applications. RDS(ON) < 13.5mΩ (VGS = 4.5V) -RoHS Compliant

5.12. aol1432.pdf Size:140K _aosemi

AOL1482
AOL1482

AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and VDS (V) =25V design to provide excellent RDS(ON) with low gate ID = 44 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 8.5 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) < 14 mΩ (VGS = 4.5V) -RoH

5.13. aol1428a.pdf Size:240K _aosemi

AOL1482
AOL1482

AOL1428A 30V N-Channel MOSFET General Description Product Summary VDS The AOL1428A combines advanced trench MOSFET 30V 49A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a < 8mΩ RDS(ON) (at VGS=10V) high side switch in SMPS and general purpose < 11.5mΩ RDS(ON) (at VGS = 4.5V) applications. 100

5.14. aol1458.pdf Size:256K _aosemi

AOL1482
AOL1482

AOL1458 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AOL1458 is fabricated with SDMOSTM trench ID (at VGS=10V) 46A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 5.6mΩ with controlled switching behavior. This universal RDS(ON) (at VGS = 4.5V) < 9.5mΩ tec

5.15. aol1444.pdf Size:209K _aosemi

AOL1482
AOL1482

AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally RDS(ON) < 4.3mΩ (VGS = 10V) suited for use as a low side switch in CPU core power RDS(ON) < 6.3mΩ (VGS = 4

5.16. aol1454.pdf Size:224K _aosemi

AOL1482
AOL1482

AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD VDS (V) = 40V protected. This device is suitable for use as a low side ID = 50A (VGS = 10V) switch in SMPS and general purpose applications. RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V)

5.17. aol1436.pdf Size:137K _aosemi

AOL1482
AOL1482

AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to VDS (V) = 25V provide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V) body diode characteristics. This device is ideally suite RDS(ON) < 6mΩ (VGS = 20V) for use as a High side switch in CPU core power RDS(ON) < 8.2mΩ (VGS = 12V)

5.18. aol1448.pdf Size:380K _aosemi

AOL1482
AOL1482

AOL1448 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOL1448 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 36A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) < 9.5mΩ general purpose applications. RDS(ON) (at VGS = 4.5V) < 14mΩ 100% UIS Tested 100% Rg Tested D D Ultr

5.19. aol1404.pdf Size:231K _aosemi

AOL1482
AOL1482

AOL1404 20V N-Channel MOSFET General Description Product Summary VDS The AOL1404 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch < 4mΩ RDS(ON) (at VGS=4.5V) and battery protection applications. < 5.6mΩ RDS(ON) (at VGS = 2.5V) 100% UIS Tested 100% Rg Test

5.20. aol1420.pdf Size:235K _aosemi

AOL1482
AOL1482

AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) < 3.7mΩ (VGS = 10V) as a low side switch in CPU core power conversion. RDS(ON) < 5.5mΩ (VGS = 4.5V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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