AON1634 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON1634

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.5 V

Tiempo de elevación (tr): 3.5 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 0.054 Ohm

Empaquetado / Estuche: DFN1.6x1.6A

Búsqueda de reemplazo de MOSFET AON1634

AON1634 Datasheet (PDF)

1.1. aon1634.pdf Size:217K _aosemi

AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V) < 54mΩ and battery protection applications. RDS(ON) (at VGS =4.5V) < 62mΩ RDS(ON) (at VGS =2.5V) < 82mΩ

5.1. aon1606.pdf Size:236K _aosemi

AON1606 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7A ideal for load switch applications. RDS(ON) (at VGS =4.5V) < 275mΩ RDS(ON) (at VGS =2.5V) < 335mΩ RDS(ON) (at VGS =1.8V) < 390mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6

5.2. aon1610.pdf Size:231K _aosemi

AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 29mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 34mΩ RDS(ON) (at VGS =1.8V) < 44mΩ

5.3. aon1620.pdf Size:236K _aosemi

AON1620 12V N-Channel MOSFET General Description Product Summary VDS The AON1620 combines advanced trench MOSFET 12V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 22mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 27mΩ RDS(ON) (at VGS =1.8V) < 36mΩ

5.4. aon1605.pdf Size:264K _aosemi

AON1605 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7A ideal for load switch applications. RDS(ON) (at VGS =-4.5V) < 710mΩ RDS(ON) (at VGS =-2.5V) < 930mΩ RDS(ON) (at VGS =-1.8V) < 1250mΩ Typical ESD protection HBM Class 1C DFN 1

5.5. aon1611.pdf Size:220K _aosemi

AON1611 20V P-Channel MOSFET General Description Product Summary VDS The AON1611 combines advanced trench MOSFET -20V technology with a low resistance package to provide ID (at VGS=-4.5V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) < 58mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 76mΩ RDS(ON) (at VGS =-1.8V) < 9

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