AON1634 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON1634
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
Paquete / Cubierta: DFN1.6X1.6A
Búsqueda de reemplazo de AON1634 MOSFET
AON1634 Datasheet (PDF)
aon1634.pdf

AON163430V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1634 combines advanced trench MOSFET 30Vtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
aon1610.pdf

AON161020V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1610 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
aon1620.pdf

AON162012V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1620 combines advanced trench MOSFET 12Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
aon1611.pdf

AON161120V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON1611 combines advanced trench MOSFET -20Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
Otros transistores... AOL1482 , AOL1700 , AOL1712 , AON1605 , AON1606 , AON1610 , AON1611 , AON1620 , 13N50 , AON2240 , AON2260 , AON2290 , AON2400 , AON2401 , AON2403 , AON2405 , AON2406 .
History: RHK005N03T146
History: RHK005N03T146



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