AON2409 Todos los transistores

 

AON2409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON2409

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.3 V

Tiempo de elevación (tr): 5.5 nS

Conductancia de drenaje-sustrato (Cd): 114 pF

Resistencia drenaje-fuente RDS(on): 0.032 Ohm

Empaquetado / Estuche: DFN2x2B

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AON2409 Datasheet (PDF)

1.1. aon2409.pdf Size:247K _aosemi

AON2409
AON2409

AON2409 30V P-Channel MOSFET General Description Product Summary VDS The AON2409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V) < 32mΩ and battery protection applications. RDS(ON) (at VGS =-4.5V) < 53mΩ DFN 2x2B Top View Bottom View

4.1. aon2400.pdf Size:234K _aosemi

AON2409
AON2409

AON2400 8V N-Channel MOSFET General Description Product Summary VDS The AON2400 combines advanced trench MOSFET 8V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 2.5V) < 11mΩ and battery protection applications. RDS(ON) (at VGS = 1.8V) < 13mΩ RDS(ON) (at VGS = 1.5V) < 16mΩ

4.2. aon2401.pdf Size:240K _aosemi

AON2409
AON2409

AON2401 8V P-Channel MOSFET General Description Product Summary VDS The AON2401 combines advanced trench MOSFET -8V technology with a low resistance package to provide ID (at VGS=-2.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-2.5V) < 22mΩ and battery protection applications. RDS(ON) (at VGS =-1.8V) < 28mΩ RDS(ON) (at VGS =-1.5V) < 36m

 4.3. aon2407.pdf Size:260K _aosemi

AON2409
AON2409

AON2407 30V P-Channel MOSFET General Description Product Summary VDS The AON2407 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -6.3A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V) < 37.5mΩ and battery protection applications. RDS(ON) (at VGS =-4.5V) < 46mΩ RDS(ON) (at VGS =-2.5V) <

4.4. aon2406.pdf Size:247K _aosemi

AON2409
AON2409

AON2406 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) < 12.5mΩ and battery protection applications. RDS(ON) (at VGS=2.5V) < 15mΩ RDS(ON) (at VGS=1.8V) < 19mΩ

 4.5. aon2405.pdf Size:243K _aosemi

AON2409
AON2409

AON2405 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON2405 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) < 32mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 41mΩ RDS(ON) (at VGS =-1.8V) <

4.6. aon2403.pdf Size:221K _aosemi

AON2409
AON2409

AON2403 12V P-Channel MOSFET General Description Product Summary VDS The AON2403 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) < 21mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 28mΩ RDS(ON) (at VGS =-1.8V) < 4

4.7. aon2408.pdf Size:235K _aosemi

AON2409
AON2409

AON2408 20V N-Channel MOSFET General Description Product Summary VDS The AON2408 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 14.5mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 19mΩ DFN 2x2B D Top View Bottom Vi

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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