AON2409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON2409
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 114 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: DFN2X2B

Búsqueda de reemplazo de MOSFET AON2409

AON2409 Datasheet (PDF)

..1. Size:247K aosemi
aon2409.pdf

AON240930V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)

..2. Size:1877K cn vbsemi
aon2409.pdf

AON2409www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2Package0.030 at VGS = - 4.5 V -10a- 20 18 nC- Small Footprint Area0.040 at VGS = - 2.5 V -9a- Low On-ResistanceAPPLICATIONS Load Switch, PA Switch, and Battery Switch for PortableDevice

8.1. Size:240K aosemi
aon2401.pdf

AON24018V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2401 combines advanced trench MOSFET -8Vtechnology with a low resistance package to provide ID (at VGS=-2.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-2.5V)

8.2. Size:260K aosemi
aon2407.pdf

AON240730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2407 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -6.3Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)

8.3. Size:247K aosemi
aon2406.pdf

AON240620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2406 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

8.4. Size:234K aosemi
aon2400.pdf

AON24008V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2400 combines advanced trench MOSFET 8Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 2.5V)

8.5. Size:221K aosemi
aon2403.pdf

AON240312V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2403 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

8.6. Size:235K aosemi
aon2408.pdf

AON240820V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2408 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

8.7. Size:243K aosemi
aon2405.pdf

AON240520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2405 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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