AON2410 Todos los transistores

 ..1. Size:226K  aosemi
 aon2410.pdf

AON2410 30V N-Channel MOSFET General Description Product Summary VDS The AON2410 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 4.5V)

 8.1. Size:254K  aosemi
 aon2411.pdf

AON2411 12V P-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology -12V Very Low RDS(ON) at 1.8V VGS ID (at VGS=-4.5V) -20A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 9.1. Size:240K  aosemi
 aon2401.pdf

AON2401 8V P-Channel MOSFET General Description Product Summary VDS The AON2401 combines advanced trench MOSFET -8V technology with a low resistance package to provide ID (at VGS=-2.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-2.5V)

 9.2. Size:260K  aosemi
 aon2407.pdf

AON2407 30V P-Channel MOSFET General Description Product Summary VDS The AON2407 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -6.3A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)

 9.3. Size:247K  aosemi
 aon2406.pdf

AON2406 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.4. Size:234K  aosemi
 aon2400.pdf

AON2400 8V N-Channel MOSFET General Description Product Summary VDS The AON2400 combines advanced trench MOSFET 8V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 2.5V)

 9.5. Size:221K  aosemi
 aon2403.pdf

AON2403 12V P-Channel MOSFET General Description Product Summary VDS The AON2403 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 9.6. Size:247K  aosemi
 aon2409.pdf

AON2409 30V P-Channel MOSFET General Description Product Summary VDS The AON2409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)

 9.7. Size:235K  aosemi
 aon2408.pdf

AON2408 20V N-Channel MOSFET General Description Product Summary VDS The AON2408 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.8. Size:243K  aosemi
 aon2405.pdf

AON2405 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON2405 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 9.9. Size:285K  aosemi
 aon2420.pdf

AON2420 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 8A Low Gate Charge RDS(ON) (at VGS =10V)

 9.10. Size:1877K  cn vbsemi
 aon2409.pdf

AON2409 www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2 Package 0.030 at VGS = - 4.5 V -10a - 20 18 nC - Small Footprint Area 0.040 at VGS = - 2.5 V -9a - Low On-Resistance APPLICATIONS Load Switch, PA Switch, and Battery Switch for Portable Device