AON2802 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON2802
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: DFN2X2

Búsqueda de reemplazo de MOSFET AON2802

AON2802 Datasheet (PDF)

..1. Size:218K aosemi
aon2802.pdf

AON280230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON2802 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.1. Size:262K aosemi
aon2800.pdf

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

8.2. Size:171K aosemi
aon2801.pdf

AON2801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON2801/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

8.3. Size:230K aosemi
aon2809.pdf

AON280912V Dual P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2809 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

8.4. Size:236K aosemi
aon2803.pdf

AON280320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2803 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8Awith gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: