AON2803 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON2803
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.5 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 8 V
Corriente continua de drenaje (Id): 3.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1 V
Tiempo de elevación (tr): 36 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia drenaje-fuente RDS(on): 0.07 Ohm
Empaquetado / Estuche: DFN2x2
Búsqueda de reemplazo de MOSFET AON2803
AON2803 Datasheet (PDF)
1.1. aon2803.pdf 
Size:236K _aosemi
AON2803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8A with gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V) < 70mΩ for use as a load switch or in PWM applications. RDS(ON) (at VGS =-2.5V) < 90mΩ RD
4.1. aon2801.pdf Size:171K _aosemi
AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON2801/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) < 120mΩ (VGS = -4.5V) device is suitable for use as a load switch or in PWM RDS(ON) < 160mΩ (VGS =
4.2. aon2809.pdf Size:230K _aosemi
AON2809 12V Dual P-Channel MOSFET General Description Product Summary VDS The AON2809 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) < 68mΩ and battery protection applications. RDS(ON) (at VGS=-2.5V) < 90mΩ RDS(ON) (at VGS=-1.8V) <
4.3. aon2800.pdf Size:262K _aosemi
AON2800 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 4.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) < 47mΩ and battery protection applications. RDS(ON) (at VGS=2.5V) < 65mΩ ESD Protected DFN 2x2 Pack
4.4. aon2802.pdf Size:218K _aosemi
AON2802 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 60mΩ and battery protection applications. RDS(ON) (at VGS=4.5V) < 68mΩ RDS(ON) (at VGS=2.5V) < 88mΩ
Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
