AON2809 Todos los transistores

 

AON2809 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON2809

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.1 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.9 V

Tiempo de elevación (tr): 24.5 nS

Conductancia de drenaje-sustrato (Cd): 115 pF

Resistencia drenaje-fuente RDS(on): 0.068 Ohm

Empaquetado / Estuche: DFN2x2

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AON2809 Datasheet (PDF)

1.1. aon2809.pdf Size:230K _aosemi

AON2809
AON2809

AON2809 12V Dual P-Channel MOSFET General Description Product Summary VDS The AON2809 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) < 68mΩ and battery protection applications. RDS(ON) (at VGS=-2.5V) < 90mΩ RDS(ON) (at VGS=-1.8V) <

4.1. aon2803.pdf Size:236K _aosemi

AON2809
AON2809

AON2803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8A with gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V) < 70mΩ for use as a load switch or in PWM applications. RDS(ON) (at VGS =-2.5V) < 90mΩ RD

4.2. aon2801.pdf Size:171K _aosemi

AON2809
AON2809

AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON2801/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) < 120mΩ (VGS = -4.5V) device is suitable for use as a load switch or in PWM RDS(ON) < 160mΩ (VGS =

 4.3. aon2800.pdf Size:262K _aosemi

AON2809
AON2809

AON2800 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 4.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) < 47mΩ and battery protection applications. RDS(ON) (at VGS=2.5V) < 65mΩ ESD Protected DFN 2x2 Pack

4.4. aon2802.pdf Size:218K _aosemi

AON2809
AON2809

AON2802 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 60mΩ and battery protection applications. RDS(ON) (at VGS=4.5V) < 68mΩ RDS(ON) (at VGS=2.5V) < 88mΩ

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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