AON3806 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON3806

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.5 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: DFN3X3

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AON3806 datasheet

 ..1. Size:232K  aosemi
 aon3806.pdf pdf_icon

AON3806

AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to 20V provide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6A operation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V)

 9.1. Size:263K  1
 aon3814.pdf pdf_icon

AON3806

 9.2. Size:330K  aosemi
 aon3820.pdf pdf_icon

AON3806

AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

 9.3. Size:264K  aosemi
 aon3816.pdf pdf_icon

AON3806

AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

MOSTRAR MÁS

Otros transistores... AON2803, AON2809, AON2810, AON2812, AON3402, AON3419, AON3611, AON3613, IRF830, AON3814, AON3816, AON3818, AON4420L, AON4421, AON4605, AON4703, AON4803