2N6969JANTXV Todos los transistores

 

2N6969JANTXV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6969JANTXV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1.6 pF

Resistencia drenaje-fuente RDS(on): 0.85 Ohm

Empaquetado / Estuche: TO213

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2N6969JANTXV Datasheet (PDF)

5.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf Size:298K _rca

2N6969JANTXV

5.2. 2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf Size:1095K _ixys

2N6969JANTXV
2N6969JANTXV

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 5.3. 2n696 2n697.pdf Size:61K _microsemi

2N6969JANTXV
2N6969JANTXV

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Junction

5.4. 2n6962.pdf Size:270K _siliconix

2N6969JANTXV
2N6969JANTXV



Otros transistores... 2N6967 , 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N7000 , 2N7000 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 , 2N7005 , 2N7006 .

 
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