AON6204 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6204
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6204 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6204 datasheet
aon6204.pdf
AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6206.pdf
AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are
aon6200.pdf
AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)
aon6202.pdf
AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
Otros transistores... AON4703, AON4803, AON4805L, AON4807, AON5802B, AON5810, AON5820, AON6202, IRFZ44N, AON6210, AON6230, AON6232, AON6234, AON6236, AON6240, AON6242, AON6244
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