AON6204 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6204
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6204 MOSFET
AON6204 Datasheet (PDF)
aon6204.pdf

AON620430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6206.pdf

AON620630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6206 uses trench MOSFET technology that is 30V24Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are
aon6200.pdf

AON620030V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance. Conduction and RDS(ON) (at VGS=10V)
aon6202.pdf

AON620230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
Otros transistores... AON4703 , AON4803 , AON4805L , AON4807 , AON5802B , AON5810 , AON5820 , AON6202 , IRFZ44N , AON6210 , AON6230 , AON6232 , AON6234 , AON6236 , AON6240 , AON6242 , AON6244 .
History: IXTA62N15P
History: IXTA62N15P



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