AON6234 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6234
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 612 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6234 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6234 datasheet
aon6234.pdf
AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are
aon6234.pdf
AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are
aon6236.pdf
AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6232a.pdf
AON6232A 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON5802B, AON5810, AON5820, AON6202, AON6204, AON6210, AON6230, AON6232, 20N60, AON6236, AON6240, AON6242, AON6244, AON6246, AON6248, AON6250, AON6260
History: P1703BDG
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