AON6240 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6240
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 1395 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6240 MOSFET
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AON6240 datasheet
aon6240.pdf
AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6240.pdf
AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6246.pdf
AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6248.pdf
AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
Otros transistores... AON5820, AON6202, AON6204, AON6210, AON6230, AON6232, AON6234, AON6236, IRF540, AON6242, AON6244, AON6246, AON6248, AON6250, AON6260, AON6266, AON6270
History: EFC4619R
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