AON6282 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6282
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 392 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6282 MOSFET
Principales características: AON6282
aon6282.pdf
AON6282 80V N-Channel MOSFET General Description Product Summary VDS The AON6282 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6284.pdf
AON6284 80V N-Channel MOSFET General Description Product Summary VDS The AON6284 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 78A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6280.pdf
AON6280 80V N-Channel MOSFET General Description Product Summary VDS 80V The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6284a.pdf
AON6284A TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
Otros transistores... AON6246 , AON6248 , AON6250 , AON6260 , AON6266 , AON6270 , AON6278 , AON6280 , IRFB4227 , AON6284 , AON6290 , AON6292 , AON6294 , AON6298 , AON6400 , AON6403 , AON6404 .
History: PH3030AL
History: PH3030AL
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