AON6282 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6282 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 392 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Encapsulados: DFN5X6
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AON6282 datasheet
aon6282.pdf
AON6282 80V N-Channel MOSFET General Description Product Summary VDS The AON6282 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6284.pdf
AON6284 80V N-Channel MOSFET General Description Product Summary VDS The AON6284 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 78A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6280.pdf
AON6280 80V N-Channel MOSFET General Description Product Summary VDS 80V The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6284a.pdf
AON6284A TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
Otros transistores... AON6246, AON6248, AON6250, AON6260, AON6266, AON6270, AON6278, AON6280, AON6414A, AON6284, AON6290, AON6292, AON6294, AON6298, AON6400, AON6403, AON6404
Parámetros del MOSFET. Cómo se afectan entre sí.
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