AON6416 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6416
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6416 MOSFET
AON6416 Datasheet (PDF)
aon6416.pdf

AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6414al.pdf

AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and
aon6411.pdf

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6414al.pdf

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Otros transistores... AON6403 , AON6404 , AON6404A , AON6405 , AON6407 , AON6411 , AON6413 , AON6414A , K4145 , AON6424 , AON6426 , AON6428 , AON6435 , AON6440 , AON6442 , AON6444 , AON6448 .
History: CEU20P10 | TK9A55DA



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