AON6442 Todos los transistores

 

AON6442 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6442
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 521 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: DFN5X6
 

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AON6442 datasheet

 ..1. Size:305K  aosemi
 aon6442.pdf pdf_icon

AON6442

AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.1. Size:262K  aosemi
 aon6440.pdf pdf_icon

AON6442

 8.2. Size:273K  aosemi
 aon6448.pdf pdf_icon

AON6442

AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.3. Size:264K  aosemi
 aon6444.pdf pdf_icon

AON6442

AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6413 , AON6414A , AON6416 , AON6424 , AON6426 , AON6428 , AON6435 , AON6440 , IRFP260 , AON6444 , AON6448 , AON6450 , AON6452 , AON6454A , AON6458 , AON6482 , AON6484 .

 

 
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