AON6452 Todos los transistores

 

AON6452 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6452

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 165 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: DFN5x6

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AON6452 Datasheet (PDF)

1.1. aon6452.pdf Size:399K _aosemi

AON6452
AON6452

AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 25mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 31mΩ

4.1. aon6454a.pdf Size:251K _aosemi

AON6452
AON6452

AON6454A 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 31A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 38mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS=7V) < 44mΩ telecom, industrial power

4.2. aon6450.pdf Size:274K _aosemi

AON6452
AON6452

AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 14.5mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 17.5m

 4.3. aon6454.pdf Size:239K _aosemi

AON6452
AON6452

AON6454 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) < 40mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 7V) < 45mΩ telecom, industrial powe

4.4. aon6458.pdf Size:562K _aosemi

AON6452
AON6452

AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150℃ performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V) < 0.17Ω guaranteed avalanche capab

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