AON6520 Todos los transistores

 

AON6520 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6520

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 31 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Tiempo de elevación (tr): 2 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.0085 Ohm

Empaquetado / Estuche: DFN5x6

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AON6520 Datasheet (PDF)

1.1. aon6520.pdf Size:248K _aosemi

AON6520
AON6520

AON6520 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8.5mΩ general purpose applications. RDS(ON) (at VGS=4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested D DFN5X

4.1. aon6526.pdf Size:305K _aosemi

AON6520
AON6520

AON6526 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

4.2. aon6522.pdf Size:280K _aosemi

AON6520
AON6520

AON6522 25V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 25V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.95mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 1.3mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

 4.3. aon6528.pdf Size:358K _aosemi

AON6520
AON6520

AON6528 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.3mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

4.4. aon6524.pdf Size:456K _aosemi

AON6520
AON6520

AON6524 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.0mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

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