AON6566 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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AON6566 Datasheet (PDF)

1.1. aon6566.pdf Size:450K _aosemi

AON6566 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

4.1. aon6560.pdf Size:342K _aosemi

AON6560 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 200A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.68mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 1.1mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • High performance O

 5.1. aon6530.pdf Size:288K _aosemi

AON6530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 7.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

5.2. aon6588.pdf Size:291K _aosemi

AON6588 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 4.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computi

 5.3. aon6536.pdf Size:327K _aosemi

AON6536 30V N-Channel MOSFET General Description Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide VDS 30V extremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55A and battery protection applications. RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS=4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested D

5.4. aon6532.pdf Size:312K _aosemi

AON6532 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.0mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9.0mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

 5.5. aon6586.pdf Size:340K _aosemi

AON6586 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS technology 30V • Low RDS(ON) ID (at VGS=10V) 35A • Low Gate Charge RDS(ON) (at VGS=10V) < 7.5mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 10.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • I

5.6. aon6526.pdf Size:305K _aosemi

AON6526 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

5.7. aon6594.pdf Size:358K _aosemi

AON6594 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 35A • Low Gate Charge RDS(ON) (at VGS=10V) < 7mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 11mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing

5.8. aon6522.pdf Size:280K _aosemi

AON6522 25V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 25V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.95mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 1.3mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

5.9. aon6510.pdf Size:291K _aosemi

AON6510 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.4mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computi

5.10. aon6516.pdf Size:306K _aosemi

AON6516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

5.11. aon6552.pdf Size:302K _aosemi

AON6552 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

5.12. aon6542.pdf Size:299K _aosemi

AON6542 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

5.13. aon6512.pdf Size:282K _aosemi

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 2.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

5.14. aon6572.pdf Size:314K _aosemi

AON6572 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.9mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Comput

5.15. aon6504.pdf Size:206K _aosemi

AON6504 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.1mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 3.2mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

5.16. aon6590.pdf Size:217K _aosemi

AON6590 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 40V • Low RDS(ON) ID (at VGS=10V) 100A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.99mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 1.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectif

5.17. aon6500.pdf Size:275K _aosemi

AON6500 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.95mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 1.3mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

5.18. aon6558.pdf Size:301K _aosemi

AON6558 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.1mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 8.2mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC

5.19. aon6544.pdf Size:426K _aosemi

AON6544 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.4mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 1.9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC

5.20. aon6596.pdf Size:340K _aosemi

AON6596 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS technology 30V • Low RDS(ON) ID (at VGS=10V) 35A • Low Gate Charge RDS(ON) (at VGS=10V) < 7.5mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 10.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • I

5.21. aon6554.pdf Size:441K _aosemi

AON6554 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.9mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC

5.22. aon6576.pdf Size:299K _aosemi

AON6576 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.7mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 7.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Comput

5.23. aon6538.pdf Size:288K _aosemi

AON6538 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 75A • Low Gate Charge RDS(ON) (at VGS=10V) < 4mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 7.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

5.24. aon6514.pdf Size:295K _aosemi

AON6514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

5.25. aon6506.pdf Size:291K _aosemi

AON6506 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 36A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.6mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

5.26. aon6528.pdf Size:358K _aosemi

AON6528 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.3mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

5.27. aon6524.pdf Size:456K _aosemi

AON6524 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.0mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

5.28. aon6520.pdf Size:248K _aosemi

AON6520 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8.5mΩ general purpose applications. RDS(ON) (at VGS=4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested D DFN5X

5.29. aon6502.pdf Size:276K _aosemi

AON6502 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.2mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 2.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

5.30. aon6508.pdf Size:204K _aosemi

AON6508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.2mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

5.31. aon6518.pdf Size:293K _aosemi

AON6518 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.75mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC

5.32. aon6534.pdf Size:299K _aosemi

AON6534 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 8mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 12mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in C

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |