AON6752 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6752
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 1468 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6752 MOSFET
AON6752 Datasheet (PDF)
aon6752.pdf

AON675230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6756.pdf

AON675630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6754.pdf

AON675430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6758.pdf

AON675830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
Otros transistores... AON6558 , AON6566 , AON6572 , AON6576 , AON6586 , AON6588 , AON6594 , AON6596 , MMIS60R580P , AON6754 , AON6756 , AON6758 , AON6760 , AON6774 , AON6780 , AON6782 , AON6810 .
History: OSG60R099PEZF | MTB09N03H8 | NCE1102N | SMG2318N
History: OSG60R099PEZF | MTB09N03H8 | NCE1102N | SMG2318N



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