AON6884 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6884
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.2 nS
Cossⓘ - Capacitancia de salida: 215 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0113 Ohm
Paquete / Cubierta: DFN5X6EP2
Búsqueda de reemplazo de MOSFET AON6884
AON6884 Datasheet (PDF)
aon6884.pdf
AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)
aon6884.pdf
AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)
aon6850.pdf
AON6850100V Dual N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6850 is fabricated with SDMOSTM trench ID (at VGS=10V) 28Atechnology that combines excellent RDS(ON) with low gate
aon6812.pdf
AON6812AlphaMOS 30V Common Drain N-ChannelGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)
aon6816.pdf
AON681630V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)
aon6810.pdf
AON6810AlphaMOS 30V Common Drain N-Channel General Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
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