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AON6918 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6918
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31(104) W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60(85) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16(17) nS
   Cossⓘ - Capacitancia de salida: 530(1680) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052(0.0018) Ohm
   Paquete / Cubierta: DFN5X6A
 

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AON6918 Datasheet (PDF)

 ..1. Size:394K  aosemi
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AON6918

AON691825V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6918 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.1. Size:545K  aosemi
 aon6912a.pdf pdf_icon

AON6918

AON6912A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)

 8.2. Size:566K  aosemi
 aon6912.pdf pdf_icon

AON6918

AON691230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.3. Size:424K  aosemi
 aon6910a.pdf pdf_icon

AON6918

AON6910A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6910A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V)37APower DFN5x6B package. The Q1 "High Side" MOSFET is

MOSTRAR MÁS

Otros transistores... AON6812 , AON6816 , AON6850 , AON6884 , AON6906A , AON6908A , AON6910A , AON6912A , MMIS60R580P , AON6920 , AON6922 , AON6924 , AON6926 , AON6928 , AON6932A , AON6934A , AON6936 .

History: P4404EI | AO4444L | P4404QVT | P4404QV

 

 
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