AON6922 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6922
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31(104) W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 71(85) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5(4.5) nS
Cossⓘ - Capacitancia de salida: 755(2470) pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038(0.0014) Ohm
Encapsulados: DFN5X6A
Búsqueda de reemplazo de AON6922 MOSFET
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AON6922 datasheet
aon6922.pdf
AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 71A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6926.pdf
AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON6926 is designed to provide a high efficiency 30V synchronous buck power stage with optimal layout and VDS 30V board space utilization. It includes two specialized 50A ID (at VGS=10V) 44A MOSFETs in a dual Power DFN5x6A package. The Q1
aon6920.pdf
AON6920 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
Otros transistores... AON6850, AON6884, AON6906A, AON6908A, AON6910A, AON6912A, AON6918, AON6920, AO4407A, AON6924, AON6926, AON6928, AON6932A, AON6934A, AON6936, AON6938, AON6946
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