AON6970 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6970
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31(78) W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 58(85) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.5(16) nS
Cossⓘ - Capacitancia de salida: 284(1100) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054(0.0015) Ohm
Paquete / Cubierta: DFN5X6D
Búsqueda de reemplazo de AON6970 MOSFET
AON6970 Datasheet (PDF)
aon6970.pdf
AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)
aon6978.pdf
AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
aon6974.pdf
AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
aon6973a.pdf
AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON6924 , AON6926 , AON6928 , AON6932A , AON6934A , AON6936 , AON6938 , AON6946 , 20N60 , AON6973A , AON6974A , AON6978 , AON6980 , AON7200 , AON7210 , AON7220 , AON7240 .
History: P2003BEA | SI8409DB | AON6936 | IPB60R600CP | NCE65N680D | IPB60R950C6
History: P2003BEA | SI8409DB | AON6936 | IPB60R600CP | NCE65N680D | IPB60R950C6
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM40P26S | AGM40P26E | AGM40P26AP | AGM40P25AP | AGM40P25A | AGM40P150C | AGM40P13S | AGM40P100H | AGM40P100C | AGM40P100A | AGM409D | AGM409A | AGM408MN | AGM408M | AGM406Q | AGM610MN
Popular searches
ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet

