AON7405 Todos los transistores

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AON7405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON7405

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 25 V

Tensión umbral compuerta-fuente Vgs(th): 2.8 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 550 pF

Resistencia drenaje-fuente RDS(on): 0.0062 Ohm

Empaquetado / Estuche: DFN3.3x3.3

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AON7405 Datasheet (PDF)

1.1. aon7405.pdf Size:319K _aosemi

AON7405
AON7405

AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V) < 6.2mΩ applications. RDS(ON) (at VGS = -6V) < 8.9mΩ • RoHS and Halogen-Free Compliant 100% UIS Test

4.1. aon7400a.pdf Size:320K _aosemi

AON7405
AON7405

AON7400A 30V N-Channel MOSFET General Description Product Summary VDS 30V • The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 7.5mΩ high side switch in SMPS and general purpose RDS(ON) (at VGS = 4.5V) < 10.5mΩ applications.

4.2. aon7403.pdf Size:172K _aosemi

AON7405
AON7405

AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) < 18mW load switch or in PWM applications. RDS(ON) (at VGS=-5V) < 36mW 100% UIS Tested DFN 3x3_EP

4.3. aon7401.pdf Size:269K _aosemi

AON7405
AON7405

AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) < 14mW load switch or in PWM applications. RDS(ON) (at VGS=-6V) < 17mW 100% UIS Tested 100% Rg Tes

4.4. aon7400.pdf Size:199K _aosemi

AON7405
AON7405

AON7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26A This device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V) < 12.5mΩ Load Switch applications. RDS(ON) (at VGS = 4.5V) < 14.5mΩ DFN 3x3 EP D Top View Bottom V

4.5. aon7402.pdf Size:301K _aosemi

AON7405
AON7405

AON7402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7402 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) < 10mΩ general purpose applications. RDS(ON) (at VGS = 4.5V) < 15mΩ 100% UIS Tested! 100% Rg Tested! DFN 3x3 E

4.6. aon7407.pdf Size:242K _aosemi

AON7405
AON7405

AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) < 9.5mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 12.5mΩ RDS(ON) (at VGS =-1.8V)

4.7. aon7404g.pdf Size:344K _aosemi

AON7405
AON7405

AON7404G 20V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 20V • Low RDS(ON) ID (at VGS=4.5V) 20A • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) < 5.3mΩ RDS(ON) (at VGS=2.5V) < 6.8mΩ Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Battery protection switch DFN 3

4.8. aon7404.pdf Size:233K _aosemi

AON7405
AON7405

AON7404 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) < 6mΩ and battery protection applications. RDS(ON) (at VGS=2.5V) < 7.5mΩ 100% UIS Tested 100% Rg Tested

4.9. aon7408.pdf Size:262K _aosemi

AON7405
AON7405

AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V) < 20mΩ applications. RDS(ON) (at VGS=4.5V) < 32mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested

4.10. aon7409.pdf Size:323K _aosemi

AON7405
AON7405

AON7409 30V P-Channel MOSFET General Description Product Summary VDS • The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) < 8.5mΩ and battery protection applications. RDS(ON) (at VGS =-4.5V) < 17mΩ • RoHS and Halogen-Free

4.11. aon7406.pdf Size:270K _aosemi

AON7405
AON7405

AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V • The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) < 17mΩ purpose applications. RDS(ON) (at VGS=4.5V) < 23mΩ Typical ESD protection HBM Class 2 • R

Otros transistores... AON7292 , AON7296 , AON7400 , AON7400A , AON7401 , AON7402 , AON7403 , AON7404 , IRF150 , AON7406 , AON7407 , AON7408 , AON7409 , AON7410 , AON7412 , AON7414 , AON7416 .

 


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Introduzca al menos 1 números o letras