AON7412 Todos los transistores

 ..1. Size:247K  aosemi
 aon7412.pdf

AON7412 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7412 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 16A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.1. Size:338K  1
 aon7410.pdf

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)

 8.2. Size:257K  1
 aon7418.pdf

AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:338K  aosemi
 aon7410.pdf

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)

 8.4. Size:288K  aosemi
 aon7414.pdf

AON7414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.5. Size:385K  aosemi
 aon7416.pdf

AON7416 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7416 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 8.6. Size:257K  aosemi
 aon7418.pdf

AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)