AON7446 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON7446
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 16.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.3 V
   Qgⓘ - Carga de la puerta: 4.4 nC
   trⓘ - Tiempo de subida: 1.5 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
   Paquete / Cubierta: DFN3X3EP

Búsqueda de reemplazo de MOSFET AON7446

AON7446 Datasheet (PDF)

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aon7446.pdf

AON744660V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

8.1. Size:268K aosemi
aon7448.pdf

AON744880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

8.2. Size:253K aosemi
aon7442.pdf

AON744230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

8.3. Size:313K aosemi
aon7440.pdf

AON744030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)

8.4. Size:263K aosemi
aon7444.pdf

AON744460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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