HAT2049T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2049T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
Qgⓘ - Carga de la puerta: 5 nC
Cossⓘ - Capacitancia de salida: 1430 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: TSOP8
Búsqueda de reemplazo de MOSFET HAT2049T
HAT2049T Datasheet (PDF)
hat2049t.pdf
HAT2049TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-723 (Z)1st. EditionFebruary 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP8568741231 5 8D D D4G1, 5, 8 Drain2, 3, 6, 7 Source4 GateS S S S2 3 76HAT2049TAbsolute Maximum Ratings (Ta = 25
rej03g1168 hat2040rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1170 hat2044rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2045t.pdf
HAT2045TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-773D (Z)Target Specification5th. EditionMar. 2001Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DS SS S2, 3, 6, 7 Sou2 3 674, 5 GMOS2MOS1HAT2045TAbsolute
hat2042t.pdf
HAT2042TSilicon N Channel Power MOS FETHigh Speed Power Switching ADE-208-669F (Z)7th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2042TAbsolute Maximum Rat
hat2043r.pdf
HAT2043RSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-668D (Z)5th. EditionFebruary 1999Features Low on-resistance Capable of 4 V gate drive Low drive current High density mountingOutlineSOP8567843217 85 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 3S1MOS2MOS1HAT2043RAbsolute Maximum
Otros transistores... HAT2037T , HAT2039R , HAT2040R , HAT2042T , HAT2043R , HAT2044R , HAT2045T , HAT2046R , IRF1404 , HAT2050T , HAT2051T , HAT2052T , HAT2053M , HAT2054M , HAT2058R , HAT2061R , HAT2064R .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918