AON7784 Todos los transistores

 ..1. Size:256K  aosemi
 aon7784.pdf

AON7784 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON7784 uses advanced trench technology ID (at VGS=10V) 50A with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.1. Size:277K  aosemi
 aon7788.pdf

AON7788 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is

 9.1. Size:358K  aosemi
 aon7754.pdf

AON7754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.2. Size:265K  aosemi
 aon7764.pdf

AON7764 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.3. Size:273K  aosemi
 aon7758.pdf

AON7758 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.4. Size:296K  aosemi
 aon7700.pdf

AON7700 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON7700 uses advanced trench technology ID (at VGS=10V) 40A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.5. Size:310K  aosemi
 aon7702b.pdf

AON7702B 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON7702B uses advanced trench technology ID (at VGS=10V) 20A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.6. Size:264K  aosemi
 aon7760.pdf

AON7760 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 25V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.7. Size:283K  aosemi
 aon7752.pdf

AON7752 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 16A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)

 9.8. Size:157K  aosemi
 aon7702a.pdf

AON7702A 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON7702A uses advanced trench technology ID (at VGS=10V) 36A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.9. Size:283K  aosemi
 aon7702.pdf

AON7702 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON7702 uses advanced trench technology ID (at VGS=10V) 37A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)