AON7788 Todos los transistores

 

AON7788 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON7788
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: DFN3X3EP

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AON7788 Datasheet (PDF)

 ..1. Size:277K  aosemi
aon7788.pdf

AON7788 AON7788

AON778830V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is

 8.1. Size:256K  aosemi
aon7784.pdf

AON7788 AON7788

AON778430V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7784 uses advanced trench technology ID (at VGS=10V) 50Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON) and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.1. Size:358K  aosemi
aon7754.pdf

AON7788 AON7788

AON775430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.2. Size:265K  aosemi
aon7764.pdf

AON7788 AON7788

AON776430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.3. Size:273K  aosemi
aon7758.pdf

AON7788 AON7788

AON775830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.4. Size:296K  aosemi
aon7700.pdf

AON7788 AON7788

AON770030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7700 uses advanced trench technology ID (at VGS=10V) 40Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.5. Size:310K  aosemi
aon7702b.pdf

AON7788 AON7788

AON7702B30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702B uses advanced trench technology ID (at VGS=10V) 20Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.6. Size:264K  aosemi
aon7760.pdf

AON7788 AON7788

AON776025V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 25V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.7. Size:283K  aosemi
aon7752.pdf

AON7788 AON7788

AON775230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 16A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)

 9.8. Size:157K  aosemi
aon7702a.pdf

AON7788 AON7788

AON7702A30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702A uses advanced trench technology ID (at VGS=10V) 36Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.9. Size:283K  aosemi
aon7702.pdf

AON7788 AON7788

AON770230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702 uses advanced trench technology ID (at VGS=10V) 37Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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