HAT2051T Todos los transistores

 

HAT2051T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT2051T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: SOP8

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HAT2051T Datasheet (PDF)

1.1. e208661 hat2051t.pdf Size:90K _renesas

HAT2051T
HAT2051T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. rej03g1174 hat2058rds.pdf Size:243K _renesas

HAT2051T
HAT2051T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. e2081636 hat2057ra.pdf Size:81K _renesas

HAT2051T
HAT2051T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rej03g1171 hat2050tds.pdf Size:110K _renesas

HAT2051T
HAT2051T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. hat2054m.pdf Size:23K _hitachi

HAT2051T
HAT2051T

HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B (Z) Preliminary 3rd. Edition Dec. 1998 Features • Low on-resistance • Low drive current • High density mounting • 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 3 1 2 5 6 2 D D D D 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta

 4.5. hat2052t.pdf Size:50K _hitachi

HAT2051T
HAT2051T

HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C (Z) 4th. Edition Feb. 1999 Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline TSSOP–8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2052T Absolute Maximum Rati

Otros transistores... HAT2040R , HAT2042T , HAT2043R , HAT2044R , HAT2045T , HAT2046R , HAT2049T , HAT2050T , 2N7000 , HAT2052T , HAT2053M , HAT2054M , HAT2058R , HAT2061R , HAT2064R , HAT2065R , HAT2068R .

 

 
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