AOT10N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT10N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de AOT10N65 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AOT10N65 datasheet

 ..1. Size:203K  aosemi
 aot10n65.pdf pdf_icon

AOT10N65

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot10n65.pdf pdf_icon

AOT10N65

isc N-Channel MOSFET Transistor AOT10N65 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:375K  aosemi
 aot10n60.pdf pdf_icon

AOT10N65

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 7.2. Size:429K  aosemi
 aot10n60 aob10n60 aotf10n60.pdf pdf_icon

AOT10N65

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON7826, AON7900, AON7902, AON7932, AON7934, AOP605, AOP609, AOT10N60, IRFP064N, AOT10T60P, AOT1100L, AOT11C60, AOT11N60, AOT11N70, AOT11S60, AOT11S65, AOT12N30