AOT10T60P Todos los transistores

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AOT10T60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT10T60P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 208 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 54 nS

Conductancia de drenaje-sustrato (Cd): 56 pF

Resistencia drenaje-fuente RDS(on): 0.7 Ohm

Empaquetado / Estuche: TO-220

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AOT10T60P Datasheet (PDF)

1.1. aot10t60p.pdf Size:284K _aosemi

AOT10T60P
AOT10T60P

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 40A • Low Ciss and Crss RDS(ON),max < 0.7Ω • High Current Capability Qg,typ 26nC • RoHS and Halogen Free Compliant Eoss @ 400V 3.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

5.1. aot10b60d.pdf Size:654K _igbt_a

AOT10T60P
AOT10T60P

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

5.2. aot10n60.pdf Size:375K _aosemi

AOT10T60P
AOT10T60P

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

5.3. aot10n65.pdf Size:203K _aosemi

AOT10T60P
AOT10T60P

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.4. aot10b60d.pdf Size:659K _aosemi

AOT10T60P
AOT10T60P

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

Otros transistores... AON7900 , AON7902 , AON7932 , AON7934 , AOP605 , AOP609 , AOT10N60 , AOT10N65 , 2SK2837 , AOT1100L , AOT11C60 , AOT11N60 , AOT11N70 , AOT11S60 , AOT11S65 , AOT12N30 , AOT12N40 .

 


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