AOT13N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT13N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 167 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.51 Ohm

Encapsulados: TO-220

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AOT13N50 datasheet

 ..1. Size:427K  aosemi
 aot13n50 aotf13n50.pdf pdf_icon

AOT13N50

AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:159K  aosemi
 aot13n50.pdf pdf_icon

AOT13N50

AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..3. Size:892K  cn vbsemi
 aot13n50.pdf pdf_icon

AOT13N50

AOT13N50 www.VBsemi.tw N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.34 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche ener

 ..4. Size:261K  inchange semiconductor
 aot13n50.pdf pdf_icon

AOT13N50

isc N-Channel MOSFET Transistor AOT13N50 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.51 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

MOSTRAR MÁS

Otros transistores... AOT11S60, AOT11S65, AOT12N30, AOT12N40, AOT12N50, AOT12N60, AOT12N60FD, AOT12N65, IRF1404, AOT1404L, AOT14N50, AOT14N50FD, AOT15S60, AOT1606L, AOT1608L, AOT16N50, AOT1N60