HAT2058R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2058R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 420 pF
Resistencia drenaje-fuente RDS(on): 0.145 Ohm
Empaquetado / Estuche: SOP8
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HAT2058R Datasheet (PDF)
1.1. rej03g1174 hat2058rds.pdf 
Size:243K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.1. e2081636 hat2057ra.pdf Size:81K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.2. e208661 hat2051t.pdf Size:90K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.3. rej03g1171 hat2050tds.pdf Size:110K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.4. hat2054m.pdf Size:23K _hitachi
HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B (Z) Preliminary 3rd. Edition Dec. 1998 Features • Low on-resistance • Low drive current • High density mounting • 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 3 1 2 5 6 2 D D D D 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta
4.5. hat2052t.pdf Size:50K _hitachi
HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C (Z) 4th. Edition Feb. 1999 Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline TSSOP–8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2052T Absolute Maximum Rati
Otros transistores... HAT2045T , HAT2046R , HAT2049T , HAT2050T , HAT2051T , HAT2052T , HAT2053M , HAT2054M , IRF530 , HAT2061R , HAT2064R , HAT2065R , HAT2068R , HAT2070R , HAT2077R , HEPF2004 , HEPF2007A .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |