AOT290L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT290L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 500 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 140 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.1 V
Carga de la puerta (Qg): 90 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 2780 pF
Resistencia entre drenaje y fuente RDS(on): 0.0035 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET AOT290L
AOT290L Datasheet (PDF)
aot290l aob290l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)
aot290l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)
aot290l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor AOT290LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aot2906.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AOT2906/AOB2906TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)
aot2904.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aot2906.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor AOT2906FEATURESDrain Current I = 122A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aot2904.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT2904FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .