AOT290L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT290L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.1 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 2780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AOT290L

AOT290L Datasheet (PDF)

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aot290l aob290l.pdf

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

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aot290l.pdf

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isc N-Channel MOSFET Transistor AOT290LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

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aot2906.pdf

AOT2906/AOB2906TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

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aot2904.pdf

AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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aot2906.pdf

isc N-Channel MOSFET Transistor AOT2906FEATURESDrain Current I = 122A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

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aot2904.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT2904FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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