AOT298L Todos los transistores

 ..1. Size:434K  aosemi
 aot298l.pdf

AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:245K  inchange semiconductor
 aot298l.pdf

isc N-Channel MOSFET Transistor AOT298L FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.1. Size:441K  1
 aot29s50l aob29s50l aotf29s50l aotf29s50.pdf

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

 9.2. Size:381K  aosemi
 aob2910l aot2910l aotf2910l.pdf

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.3. Size:278K  aosemi
 aot292l.pdf

AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary VDS The AOT292L/AOB292L uses Trench MOSFET 100V ID (at VGS=10V) 105A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.4. Size:281K  aosemi
 aot296l.pdf

AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.5. Size:434K  aosemi
 aot2910l aob2910l aotf2910l.pdf

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.6. Size:341K  aosemi
 aot290l aob290l.pdf

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

 9.7. Size:992K  aosemi
 aot29s50l aob29s50l aotf29s50l aotf29s50.pdf

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

 9.8. Size:434K  aosemi
 aot2910l.pdf

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.9. Size:341K  aosemi
 aot290l.pdf

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

 9.10. Size:409K  aosemi
 aot2916l.pdf

AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2916L & AOTF2916L uses trench MOSFET 100V technology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.11. Size:373K  aosemi
 aot2906.pdf

AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

 9.12. Size:324K  aosemi
 aot29s50.pdf

AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By provi

 9.13. Size:571K  aosemi
 aot29s50l.pdf

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have IDM 120A been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.15W switching applications. Qg,typ 26

 9.14. Size:403K  aosemi
 aot296l aob296l.pdf

AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.15. Size:479K  aosemi
 aot292l aob292l aotf292l.pdf

AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 9.16. Size:362K  aosemi
 aot2904.pdf

AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.17. Size:381K  aosemi
 aot2918l.pdf

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.18. Size:345K  aosemi
 aot2916l aotf2916l.pdf

 9.19. Size:244K  inchange semiconductor
 aot292l.pdf

isc N-Channel MOSFET Transistor AOT292L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.20. Size:244K  inchange semiconductor
 aot296l.pdf

isc N-Channel MOSFET Transistor AOT296L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

 9.21. Size:245K  inchange semiconductor
 aot2910l.pdf

isc N-Channel MOSFET Transistor AOT2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.22. Size:245K  inchange semiconductor
 aot290l.pdf

isc N-Channel MOSFET Transistor AOT290L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.23. Size:265K  inchange semiconductor
 aot2916l.pdf

isc N-Channel MOSFET Transistor AOT2916L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =34m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.24. Size:245K  inchange semiconductor
 aot2906.pdf

isc N-Channel MOSFET Transistor AOT2906 FEATURES Drain Current I = 122A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.25. Size:261K  inchange semiconductor
 aot29s50.pdf

isc N-Channel MOSFET Transistor AOT29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.26. Size:206K  inchange semiconductor
 aot2904.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOT2904 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

 9.27. Size:245K  inchange semiconductor
 aot2918l.pdf

isc N-Channel MOSFET Transistor AOT2918L FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener