AOT3N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT3N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 31.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AOT3N60

AOT3N60 Datasheet (PDF)

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aot3n60.pdf

AOT3N60600V,2.5A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT3N60 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.5Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

..2. Size:261K inchange semiconductor
aot3n60.pdf

isc N-Channel MOSFET Transistor AOT3N60FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:329K aosemi
aot3n100.pdf

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

9.2. Size:158K aosemi
aot3n50.pdf

AOT3N50/AOTF3N50500V, 3A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT3N50 & AOTF3N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 3Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.3. Size:261K inchange semiconductor
aot3n100.pdf

isc N-Channel MOSFET Transistor AOT3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.4. Size:261K inchange semiconductor
aot3n50.pdf

isc N-Channel MOSFET Transistor AOT3N50FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME7802S-G

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