AOT418L Todos los transistores

 ..1. Size:296K  aosemi
 aot418l.pdf

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 ..2. Size:245K  inchange semiconductor
 aot418l.pdf

isc N-Channel MOSFET Transistor AOT418L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.1. Size:416K  aosemi
 aot410l aob410l.pdf

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 150A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

 9.2. Size:313K  aosemi
 aot412.pdf

 9.3. Size:199K  aosemi
 aot416.pdf

AOT416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.4. Size:313K  aosemi
 aot412 aob412l.pdf

 9.5. Size:344K  aosemi
 aot410l.pdf

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.6. Size:325K  aosemi
 aot414.pdf

AOT414 100V N-channel MOSFET General Description Product Summary VDS 100V The AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.7. Size:238K  inchange semiconductor
 aot412.pdf

isc N-Channel MOSFET Transistor AOT412 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 15.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.8. Size:245K  inchange semiconductor
 aot416.pdf

isc N-Channel MOSFET Transistor AOT416 FEATURES Drain Current I = 42A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 37m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 9.9. Size:244K  inchange semiconductor
 aot410l.pdf

isc N-Channel MOSFET Transistor AOT410L FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.10. Size:244K  inchange semiconductor
 aot414.pdf

isc N-Channel MOSFET Transistor AOT414 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera