AOT418L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT418L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 382 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AOT418L

AOT418L Datasheet (PDF)

..1. Size:296K aosemi
aot418l.pdf

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

..2. Size:245K inchange semiconductor
aot418l.pdf

isc N-Channel MOSFET Transistor AOT418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.1. Size:313K aosemi
aot412.pdf

AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

9.2. Size:199K aosemi
aot416.pdf

AOT416100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.3. Size:313K aosemi
aot412 aob412l.pdf

9.4. Size:344K aosemi
aot410l.pdf

AOT410L/AOB410L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT410L/AOB410L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150Agate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.5. Size:325K aosemi
aot414.pdf

AOT414100V N-channel MOSFETGeneral Description Product SummaryVDS100VThe AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.6. Size:238K inchange semiconductor
aot412.pdf

isc N-Channel MOSFET Transistor AOT412FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.7. Size:245K inchange semiconductor
aot416.pdf

isc N-Channel MOSFET Transistor AOT416FEATURESDrain Current I = 42A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.8. Size:244K inchange semiconductor
aot410l.pdf

isc N-Channel MOSFET Transistor AOT410LFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

9.9. Size:244K inchange semiconductor
aot414.pdf

isc N-Channel MOSFET Transistor AOT414FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: UF3205L-TQ2-R

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