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AOT470 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT470
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 268 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 114 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: TO-220

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AOT470 Datasheet (PDF)

 ..1. Size:305K  aosemi
aot470.pdf

AOT470 AOT470

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 ..2. Size:305K  aosemi
aot470 aob470l.pdf

AOT470 AOT470

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 ..3. Size:259K  inchange semiconductor
aot470.pdf

AOT470 AOT470

isc N-Channel MOSFET Transistor AOT470FEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:176K  aosemi
aot474.pdf

AOT470 AOT470

AOT474/AOTF47475V N-Channel MOSFET General Description Product SummaryThe AOT474 and AOTF474 use a robust technology that 75VVDSis designed to provide efficient and reliable power 127A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 47A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

 9.2. Size:177K  aosemi
aot472.pdf

AOT470 AOT470

AOT472/AOTF47275V N-Channel MOSFETGeneral Description Product SummaryThe AOT472 and AOTF472 use a robust technology that 75VVDSis designed to provide efficient and reliable power 140A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 53A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

 9.3. Size:261K  inchange semiconductor
aot474.pdf

AOT470 AOT470

isc N-Channel MOSFET Transistor AOT474FEATURESDrain Current I = 127A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 11.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.4. Size:206K  inchange semiconductor
aot472.pdf

AOT470 AOT470

Isc N-Channel MOSFET Transistor AOT472FEATURESWith To-220 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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