AOT472 Todos los transistores

 ..1. Size:177K  aosemi
 aot472.pdf

AOT472/AOTF472 75V N-Channel MOSFET General Description Product Summary The AOT472 and AOTF472 use a robust technology that 75V VDS is designed to provide efficient and reliable power 140A ID (TO220 at VGS=10V) conversion even in the most demanding applications, 53A ID (TO220FL at VGS=10V) including motor control. With low RDS(ON) and excellent

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 aot472.pdf

Isc N-Channel MOSFET Transistor AOT472 FEATURES With To-220 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V

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 aot474.pdf

AOT474/AOTF474 75V N-Channel MOSFET General Description Product Summary The AOT474 and AOTF474 use a robust technology that 75V VDS is designed to provide efficient and reliable power 127A ID (TO220 at VGS=10V) conversion even in the most demanding applications, 47A ID (TO220FL at VGS=10V) including motor control. With low RDS(ON) and excellent

 9.2. Size:305K  aosemi
 aot470.pdf

AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary VDS The AOT470/AOB470L uses advanced trench technology 75V and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100A charge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 9.3. Size:305K  aosemi
 aot470 aob470l.pdf

AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary VDS The AOT470/AOB470L uses advanced trench technology 75V and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100A charge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

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 aot474.pdf

isc N-Channel MOSFET Transistor AOT474 FEATURES Drain Current I = 127A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 11.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.5. Size:259K  inchange semiconductor
 aot470.pdf

isc N-Channel MOSFET Transistor AOT470 FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 10.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose