AOTF11N60 Todos los transistores

 ..1. Size:545K  aosemi
 aotf11n60.pdf

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150 using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:457K  aosemi
 aot11n60l aotf11n60l aotf11n60.pdf

AOT11N60L/AOTF11N60L/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60L & AOTF11N60L & AOTF11N60 700V@150 have been fabricated using an advanced high voltage ID (at VGS=10V) 11A MOSFET process that is designed to deliver high RDS(ON) (at VGS=10V)

 ..3. Size:251K  inchange semiconductor
 aotf11n60.pdf

isc N-Channel MOSFET Transistor AOTF11N60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:544K  aosemi
 aotf11n62.pdf

AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary VDS 720V@150 The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 6.2. Size:251K  inchange semiconductor
 aotf11n62.pdf

isc N-Channel MOSFET Transistor AOTF11N62 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 620V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 7.1. Size:218K  aosemi
 aotf11n70.pdf

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:252K  inchange semiconductor
 aotf11n70.pdf

isc N-Channel MOSFET Transistor AOTF11N70 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur