AOTF11N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

AOTF11N62620V,11A N-Channel MOSFETGeneral Description Product Summary VDS720V@150The AOTF11N62 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF11N62FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 620V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

AOT11N70/AOTF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT11N70 & AOTF11N70 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF11N70FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur