AOTF15S60 Todos los transistores

 

AOTF15S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF15S60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 V
   Qgⓘ - Carga de la puerta: 15.6 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-220F
 

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AOTF15S60 Datasheet (PDF)

 ..1. Size:343K  aosemi
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AOTF15S60

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

 ..2. Size:251K  inchange semiconductor
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AOTF15S60

isc N-Channel MOSFET Transistor AOTF15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 0.1. Size:343K  aosemi
 aotf15s60l.pdf pdf_icon

AOTF15S60

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

 0.2. Size:251K  inchange semiconductor
 aotf15s60l.pdf pdf_icon

AOTF15S60

isc N-Channel MOSFET Transistor AOTF15S60LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

MOSTRAR MÁS

Otros transistores... AOTF12N65 , AOTF12T50P , AOTF12T50PL , AOTF12T60 , AOTF12T60P , AOTF13N50 , AOTF14N50 , AOTF14N50FD , P55NF06 , AOTF15S65 , AOTF16N50 , AOTF18N65 , AOTF20C60 , AOTF20N40 , AOTF20N60 , AOTF20S60 , AOTF22N50 .

History: 3SK293 | TPB70R450C | 2SK4058-S27-AY | AP9561GM-HF | IXFQ94N30P3 | TPB65R360M | IXTA02N250HV

 

 
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