AOTF256L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOTF256L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 61.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET AOTF256L

AOTF256L Datasheet (PDF)

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aotf256l.pdf

AOTF256L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOTF256L uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

..2. Size:250K inchange semiconductor
aotf256l.pdf

isc N-Channel MOSFET Transistor AOTF256LFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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aotf25s65.pdf

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

8.2. Size:250K inchange semiconductor
aotf25s65l.pdf

isc N-Channel MOSFET Transistor AOTF25S65LFEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

8.3. Size:250K inchange semiconductor
aotf25s65.pdf

isc N-Channel MOSFET Transistor AOTF25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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