AOTF2606L Todos los transistores

 ..1. Size:420K  aosemi
 aot2606l aob2606l aotf2606l.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:349K  aosemi
 aotf2606l.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..3. Size:262K  inchange semiconductor
 aotf2606l.pdf

sc N-Channel MOSFET Transistor AOTF2606L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATIN

 7.1. Size:255K  aosemi
 aotf260l.pdf

AOTF260L 60V N-Channel MOSFET General Description Product Summary VDS The AOTF260L uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 92A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 7.2. Size:236K  inchange semiconductor
 aotf260l.pdf

isc N-Channel MOSFET Transistor AOTF260L FEATURES Drain Current I = 92A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 8.1. Size:424K  aosemi
 aot2618l aob2618l aotf2618l.pdf

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.2. Size:348K  aosemi
 aot2610l aotf2610l.pdf

 8.3. Size:414K  aosemi
 aot266l aob266l aotf266l.pdf

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to ID (at VGS=10V) 140A/78A provide the most efficient high frequency switching RDS(ON) (at VGS=10V)

 8.4. Size:348K  aosemi
 aotf2610l.pdf

 8.5. Size:405K  aosemi
 aotf266l.pdf

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.6. Size:367K  aosemi
 aotf2618l.pdf

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.7. Size:313K  aosemi
 aotf262l.pdf

 8.8. Size:235K  inchange semiconductor
 aotf266l.pdf

isc N-Channel MOSFET Transistor AOTF266L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 8.9. Size:202K  inchange semiconductor
 aotf2618l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF2618L FEATURES With TO-220F packaging High speed switching Easy to use The most efficient high frequency switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applicat

 8.10. Size:235K  inchange semiconductor
 aotf262l.pdf

isc N-Channel MOSFET Transistor AOTF262L FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene