AOTF42S60L Todos los transistores

 

AOTF42S60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF42S60L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37.9 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 39 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.8 V

Carga de compuerta (Qg): 40 nC

Tiempo de elevación (tr): 53 nS

Conductancia de drenaje-sustrato (Cd): 135 pF

Resistencia drenaje-fuente RDS(on): 0.099 Ohm

Empaquetado / Estuche: TO-220F

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AOTF42S60L Datasheet (PDF)

1.1. aotf42s60l.pdf Size:271K _aosemi

AOTF42S60L
AOTF42S60L

AOTF42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOTF42S60 have been fabricated using the IDM 166A advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.099Ω switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along wit

1.2. aotf42s60.pdf Size:271K _aosemi

AOTF42S60L
AOTF42S60L

AOTF42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOTF42S60 have been fabricated using the IDM 166A advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.099Ω switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along wit

 5.1. aotf454l.pdf Size:242K _aosemi

AOTF42S60L
AOTF42S60L

AOTF454L 150V N-Channel MOSFET General Description Product Summary VDS The AOTF454L combines advanced trench MOSFET 150V 13A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON).This device is ideal for boost < 94mΩ RDS(ON) (at VGS=10V) converters and synchronous rectifiers for consumer, < 110mΩ RDS(ON) (at VGS=7V) telecom, industrial p

5.2. aotf4n60.pdf Size:252K _aosemi

AOTF42S60L
AOTF42S60L

AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 2.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

 5.3. aotf4s60.pdf Size:296K _aosemi

AOTF42S60L
AOTF42S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9Ω performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

5.4. aotf4126.pdf Size:370K _aosemi

AOTF42S60L
AOTF42S60L

AOTF4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOTF4126 is fabricated with SDMOSTM trench ID (at VGS=10V) 27A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 24mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 30m

 5.5. aotf4185.pdf Size:242K _aosemi

AOTF42S60L
AOTF42S60L

AOTF4185 40V P-Channel MOSFET General Description Product Summary VDS -40V The AOTF4185 combines advanced trench MOSFET - 40V technology with a low resistance package to provide ID (at VGS=-10V) -34A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) < 16mΩ and battery protection applications. RDS(ON) (at VGS =-4.5V) < 20mΩ 100% UIS Tested 100%

5.6. aotf4n90.pdf Size:185K _aosemi

AOTF42S60L
AOTF42S60L

AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 3.6Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche ca

5.7. aotf472.pdf Size:177K _aosemi

AOTF42S60L
AOTF42S60L

AOT472/AOTF472 75V N-Channel MOSFET General Description Product Summary The AOT472 and AOTF472 use a robust technology that 75V VDS is designed to provide efficient and reliable power 140A ID (TO220 at VGS=10V) conversion even in the most demanding applications, 53A ID (TO220FL at VGS=10V) including motor control. With low RDS(ON) and excellent < 8.9mΩ RDS(ON) (at VGS=10V)

5.8. aotf450l.pdf Size:441K _aosemi

AOTF42S60L
AOTF42S60L

AOTF450L 200V, 5.8A N-Channel MOSFET General Description Product Summary The AOTF450L is fabricated using an advanced high VDS 250V@150℃ voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 5.8A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.7Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.9. aotf474.pdf Size:176K _aosemi

AOTF42S60L
AOTF42S60L

AOT474/AOTF474 75V N-Channel MOSFET General Description Product Summary The AOT474 and AOTF474 use a robust technology that 75V VDS is designed to provide efficient and reliable power 127A ID (TO220 at VGS=10V) conversion even in the most demanding applications, 47A ID (TO220FL at VGS=10V) including motor control. With low RDS(ON) and excellent < 11.3mΩ RDS(ON) (at VGS=10V

5.10. aotf4t60p.pdf Size:443K _aosemi

AOTF42S60L
AOTF42S60L

AOTF4T60P 600V,4A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 16A • Low Ciss and Crss RDS(ON),max < 2.1Ω • High Current Capability Qg,typ 8.3nC • RoHS and Halogen Free Compliant Eoss @ 400V 1.6µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL

5.11. aotf404.pdf Size:112K _aosemi

AOTF42S60L
AOTF42S60L

AOTF404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF404/L uses advanced trench technology and VDS (V) = 105V design to provide excellent RDS(ON) with low gate charge. ID = 26 A (VGS =10V) This device is suitable for use in high voltage RDS(ON) < 28 mΩ (VGS =10V) synchronous rectification , load switching and general RDS(ON) < 31 mΩ (V

5.12. aotf409.pdf Size:151K _aosemi

AOTF42S60L
AOTF42S60L

AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate VDS (V) =-60V resistance. With the excellent thermal resistance of the (VGS = -10V) ID = -24A TO220FL package, this device is well suited for high (VGS = -10V) RDS(ON) < 40mΩ current lo

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