AOTF450L Todos los transistores

 

AOTF450L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF450L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: TO-220FL
 

 Búsqueda de reemplazo de AOTF450L MOSFET

   - Selección ⓘ de transistores por parámetros

 

AOTF450L Datasheet (PDF)

 ..1. Size:441K  aosemi
aotf450l.pdf pdf_icon

AOTF450L

AOTF450L200V, 5.8A N-Channel MOSFETGeneral Description Product SummaryThe AOTF450L is fabricated using an advanced high VDS 250V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 5.8Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
aotf450l.pdf pdf_icon

AOTF450L

isc N-Channel MOSFET Transistor AOTF450LFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.265(TYPE)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 7.1. Size:662K  aosemi
aotf450a70l.pdf pdf_icon

AOTF450L

AOTF450A70L/AOT450A70L/AOB450A70LTM 700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 8.1. Size:242K  aosemi
aotf454l.pdf pdf_icon

AOTF450L

AOTF454L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOTF454L combines advanced trench MOSFET 150V13Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON).This device is ideal for boost

Otros transistores... AOTF3N80 , AOTF3N90 , AOTF404 , AOTF409 , AOTF4126 , AOTF4185 , AOTF42S60 , AOTF42S60L , IRFP250 , AOTF454L , AOTF472 , AOTF474 , AOTF4N60 , AOTF4N90 , AOTF4S60 , AOTF4T60P , AOTF5N100 .

History: SQS484ENW

 

 
Back to Top

 


 
.