AOTF450L Todos los transistores

 ..1. Size:441K  aosemi
 aotf450l.pdf

AOTF450L 200V, 5.8A N-Channel MOSFET General Description Product Summary The AOTF450L is fabricated using an advanced high VDS 250V@150 voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 5.8A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf450l.pdf

isc N-Channel MOSFET Transistor AOTF450L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.265 (TYPE) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 7.1. Size:662K  aosemi
 aotf450a70l.pdf

AOTF450A70L/AOT450A70L/AOB450A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

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 aotf454l.pdf

AOTF454L 150V N-Channel MOSFET General Description Product Summary VDS The AOTF454L combines advanced trench MOSFET 150V 13A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON).This device is ideal for boost

 8.2. Size:252K  inchange semiconductor
 aotf454l.pdf

isc N-Channel MOSFET Transistor AOTF454L FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Static Drain-Source On-Resistance R =94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose