AOTF5N50 Todos los transistores

 ..1. Size:159K  aosemi
 aotf5n50.pdf

AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 5A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:508K  aosemi
 aot5n50 aotf5n50.pdf

AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 5A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..3. Size:251K  inchange semiconductor
 aotf5n50.pdf

isc N-Channel MOSFET Transistor AOTF5N50 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 0.1. Size:347K  aosemi
 aotf5n50fd.pdf

AOTF5N50FD 500V, 5A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150 The AOTF5N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.2. Size:251K  inchange semiconductor
 aotf5n50fd.pdf

isc N-Channel MOSFET Transistor AOTF5N50FD FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =1.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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 aotf5n100.pdf

AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 4A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.2. Size:251K  inchange semiconductor
 aotf5n100.pdf

isc N-Channel MOSFET Transistor AOTF5N100 FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 4.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp